STS SOE ICP
STS SOE system combines a high conductance, high vacuum compatible process chamber with a patented ICP source to produce a very high ion density at low pressures. With this technology, STS ICP Standard Oxide Etcher is suitable for shallow etching (less than 15 micron trenches) of SiO2 and III-V materials that require higher etch rates, higher aspect ratios, and better selectivity compared to using conventional RIE technology on 4" wafers.
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- Tran-Vinh Nguyen
Cleanroom - Pettit
CapabilitiesEtch - Dielectrics - Gallium Nitride
Etch - Dielectrics - Indium Phosphide
Etch - Dielectrics - Silicon Oxide
General Equipment Specification - ICP Systems
Shared DriveNo share drive for this equipment.
Equipment access control, scheduling, and training is now managed within the Shared User Management System (SUMS) To schedule time on equipment within SUMS browse to https://sums.gatech.edu/Department/IEN log in, search for equipment, and click & drag to schedule time.
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Standard Recipes and Reports
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User Shared Files
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You are billed the cleanroom hourly rate when logged into this tool, even if you are not logged into a cleanroom.
See our rates for more information.
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Training SessionsTraining for the IEN Cleanrooms is now managed within the Shared User Management System. (SUMS) To get trained for the Cleanrooms, or equipment within the IEN department simply browse to http://sums.gatech.edu/Department/IEN Log in with your Georgia Tech username and password, then browse to the IEN Equipment Group page to learn new training info.