ALD2

Description

The Atomic Layer Deposition (ALD) tool is used to deposit atomic layers of material. The ALD2 uses 4 precursor gases and pulses each with a N2 purge following each pulse. Each cycle of gases deposits an atomic layer of material via typically two half-reactions. The tool is currently set up to deposit Al2O3, HfO2, and Er2O3.

Specifications:
wafer pieces up to 6" wafer
25C-250C
base pressure 5mT

Status

You must first log in to see the status.

Tool Owners

  • John Pham

Location

Cleanroom - Marcus Inorganic

Capabilities

ALD - Dielectrics Deposition - Alumina
ALD - Dielectrics Deposition - Erbium Oxide
ALD - Dielectrics Deposition - Hafnia
General Equipment Specification - ALD Systems

Shared Drive

No share drive for this equipment.

Schedule

Equipment access control, scheduling, and training is now managed within the Shared User Management System (SUMS)
To schedule time on equipment within SUMS browse to https://sums.gatech.edu/Department/IEN log in, search for equipment, and click & drag to schedule time.

Equipment with Similar Capabilities

Cambridge NanoTech Plasma ALD - Metal (left)

The Cambridge Fiji Plasma ALD system uses ALD precursors to deposit pin-hole free films in ultra-high aspect ratio features. Film thickness can be controlled to within 1nm.<br> <br> Specifications:<br> -Dual chamber w/ load-locks<br> -Chuck temperature from RT to 500C<br> -RF Plasma (up to 300W)<br> -Up to 8" (200mm) wafer, maximum 0.20in/5mm thick<br> -Auto-logs run data (pressure, temp, etc)<br> <br> Materials available (as of 11/4/15):<br> Al2O3<br> AlN<br> ZnO<br>

Location

Cleanroom - Marcus Inorganic

Cambridge NanoTech Plasma ALD - Oxide (right)

The Cambridge Fiji Plasma ALD system uses ALD precursors to deposit pin-hole free films in ultra-high aspect ratio features. Film thickness can be controlled to within 1nm. <br> <br> Specifications:<br> -Dual chamber w/ load-locks<br> -Chuck temperature from RT to 500C<br> -RF Plasma (up to 300W)<br> -Up to 8" (200mm) wafer, maximum 0.20in/5mm thick<br> -Auto-logs run data (pressure, temp, etc)<br> <br> Materials available (as of 10/10/14):<br> Al2O3<br> HfO2<br> SiO2<br> ZrO2<br> TiO2<br> TiN<br> AlN<br> HfN<br> ZrN<br>

Location

Cleanroom - Marcus Inorganic

Standard Recipes and Reports

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User Shared Files

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Billing Rates

You are billed the cleanroom hourly rate when logged into this tool, even if you are not logged into a cleanroom.

See our rates for more information.

Service Requests

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Equipment Log

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Training Sessions

Training for the IEN Cleanrooms is now managed within the Shared User Management System. (SUMS)
To get trained for the Cleanrooms, or equipment within the IEN department simply browse to http://sums.gatech.edu/Department/IEN
Log in with your Georgia Tech username and password, then browse to the IEN Equipment Group page to learn new training info.

Cleanroom

The IEN has cleanrooms in the Pettit Microelectronics Research building and the Marcus Nanotechnology Research building. Learn More

Georgia Tech Institute for Electronics and Nanotechnology

The Institute for Electronics and Nanotechnology (IEN) is a Georgia Tech interdisciplinary research institute designed to enhance support for rapidly growing research programs spanning biomedicine, materials, electronics and nanotechnology. Learn More

Visit Georgia Tech IEN

Marcus Nanotechnology Research Center
Georgia Institute of Technology
345 Ferst Drive NW
Atlanta, GA 30318
(404) 894-5100
Pettit Microelectronics Research Building
Georgia Institute of Technology
791 Atlantic Drive
Atlanta, Ga 30332
(404) 894-5100