Oxford Cryogenic ICP
The Oxford Cryogenic ICP (Inductively Coupled Plasma) etching (DRIE) produces high ion densities and hence fast etch rates, while allowing separate control of ion density and ion energy (giving a low damage capability). Wafer clamping and helium back-side cooling is the standard and provides excellent temperature control with the cryogenic to provide a wide temperature range (-150C to 400C). Only 4" wafers are allowed in this system.
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- Tran-Vinh Nguyen
Cleanroom - Marcus Inorganic
CapabilitiesEtch - Copper
Etch - Dielectrics - Silicon Oxide
General Equipment Specification - ICP Systems
Shared DriveAccess Shared Drive
Equipment access control, scheduling, and training is now managed within the Shared User Management System (SUMS) To schedule time on equipment within SUMS browse to https://sums.gatech.edu/Department/IEN log in, search for equipment, and click & drag to schedule time.
Equipment with Similar Capabilities
The STS ICP is a CMOS-compatible tool used for integrated MEMS-CMOS processes, and is meant for narrow (<10 micron in width) high aspect-ratio trench etching (DRIE) in silicon and SOI wafers. This system is used only for etching high aspect-ratio trenches in silicon (BOSCH process) and 4" SOI wafers.
Cleanroom - Pettit
Standard Recipes and Reports
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User Shared Files
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You are billed the cleanroom hourly rate when logged into this tool, even if you are not logged into a cleanroom.
See our rates for more information.
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Training SessionsTraining for the IEN Cleanrooms is now managed within the Shared User Management System. (SUMS) To get trained for the Cleanrooms, or equipment within the IEN department simply browse to http://sums.gatech.edu/Department/IEN Log in with your Georgia Tech username and password, then browse to the IEN Equipment Group page to learn new training info.