Oxford PECVD right

Description

A PECVD (Plasma Enhanced Chemical Vapor Depositor) reacts gases in a RF (radio frequency) induced plasma to deposit SiO2 and SixNy materials. This PECVD has one chamber and medium deposition electrode that can hold samples sizes of up to a single 6" wafer. This machine operates at 13.56 Mhz and is designed to control the stress of deposited films by adjusting the ratio of He:N2 gas flows.

Status

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Tool Owners

  • Tran-Vinh Nguyen

Location

Cleanroom - Marcus Inorganic

Capabilities

Deposition - Dielectrics Deposition - Silicon Nitride
Deposition - Dielectrics Deposition - Silicon Oxide
General Equipment Specification - PECVD Systems

Shared Drive

Access Shared Drive

Schedule

Equipment access control, scheduling, and training is now managed within the Shared User Management System (SUMS)
To schedule time on equipment within SUMS browse to https://sums.gatech.edu/Department/IEN log in, search for equipment, and click & drag to schedule time.

Equipment with Similar Capabilities

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Location

Cleanroom - Marcus Inorganic

Oxford PECVD 1 (remove this)

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Location

Cleanroom - Marcus Inorganic

Oxford PECVD left

A PECVD (Plasma Enhanced Chemical Vapor Depositor) reacts gases in a RF (radio frequency) induced plasma to deposit SixNy, SiC, and a-Si materials. This PECVD has one chamber and medium deposition electrode that can hold samples sizes of up to a single 6" wafer. This machine operates at 13.56 Mhz.

Location

Cleanroom - Marcus Inorganic

STS PECVD

A PECVD (Plasma Enhanced Chemical Vapor Depositor) process reacts gases in a RF (radio frequency) induced plasma to deposit materials such as silicon dioxide and silicon nitride. -Large deposition electrode: pieces up to a single 6" wafer -Programmable dual frequency operation for precise stress control -Reproducible film properties

Location

Cleanroom - Pettit

STS PECVD 2

A PECVD (Plasma Enhanced Chemical Vapor Depositor) process reacts gases in a RF (radio frequency) induced plasma to deposit dielectric materials. It has a large deposition electrode that can hold sample sizes from small pieces up to a single 6" wafer and a programmable dual frequency operation for precise stress control. Reproducible film properties.

Location

Cleanroom - Pettit

STS PECVD 3

A PECVD process reacts gases in a RF (radio frequency) induced plasma to deposit materials such as silicon dioxide and silicon nitride. -Large deposition electrode: up to 5 - 3", 4 - 4" wafers or a single 6" wafer

Location

Cleanroom - Marcus Inorganic

Unaxis PECVD

A PECVD (Plasma Enhanced Chemical Vapor Depositor) reacts gases in a RF (radio frequency) induced plasma to deposit dielectric materials. This PECVD has one chamber and large deposition electrode that can hold samples sizes of up to 5-3", 4-4" wafers or a single 6" wafer. This machine operates at 13.56 Mhz and is designed to control the stress of deposited films by adjusting the ratio of He:N2 gas flows.

Location

Cleanroom - Pettit

Standard Recipes and Reports

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User Shared Files

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Billing Rates

There are no hourly rates for this equipment. You will only be charged for cleanroom time.

See our rates for more information.

Service Requests

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Equipment Log

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Training Sessions

Training for the IEN Cleanrooms is now managed within the Shared User Management System. (SUMS)
To get trained for the Cleanrooms, or equipment within the IEN department simply browse to http://sums.gatech.edu/Department/IEN
Log in with your Georgia Tech username and password, then browse to the IEN Equipment Group page to learn new training info.

Cleanroom

The IEN has cleanrooms in the Pettit Microelectronics Research building and the Marcus Nanotechnology Research building. Learn More

Georgia Tech Institute for Electronics and Nanotechnology

The Institute for Electronics and Nanotechnology (IEN) is a Georgia Tech interdisciplinary research institute designed to enhance support for rapidly growing research programs spanning biomedicine, materials, electronics and nanotechnology. Learn More

Visit Georgia Tech IEN

Marcus Nanotechnology Research Center
Georgia Institute of Technology
345 Ferst Drive NW
Atlanta, GA 30318
(404) 894-5100
Pettit Microelectronics Research Building
Georgia Institute of Technology
791 Atlantic Drive
Atlanta, Ga 30332
(404) 894-5100