A PECVD (Plasma Enhanced Chemical Vapor Depositor) reacts gases in a RF (radio frequency) induced plasma to deposit materials such as silicon dioxide and silicon nitride. This PECVD has two chambers. -Operates at 13.56 MHz -Sample size: pieces to 6" wafers -Typical deposition rates: 100 angstrom/min - 400 angstrom/min -Typical processes: Silicon Dioxide, Silicon Nitride, Silicon Oxynitride
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Cleanroom - Pettit
CapabilitiesGeneral Equipment Specification - PECVD Systems
Shared DriveNo share drive for this equipment.
Equipment access control, scheduling, and training is now managed within the Shared User Management System (SUMS) To schedule time on equipment within SUMS browse to https://sums.gatech.edu/Department/IEN log in, search for equipment, and click & drag to schedule time.
Equipment with Similar Capabilities
Cleanroom - Marcus Inorganic
Standard Recipes and Reports
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User Shared Files
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Training SessionsTraining for the IEN Cleanrooms is now managed within the Shared User Management System. (SUMS) To get trained for the Cleanrooms, or equipment within the IEN department simply browse to http://sums.gatech.edu/Department/IEN Log in with your Georgia Tech username and password, then browse to the IEN Equipment Group page to learn new training info.