Lindberg Furnace 4 (Polymer Curing Tube)

Description

The Lindberg furnace tube 4 is used for curing polymers, sintering, and growing oxides and nitrides on silicon wafers.

*Max temperature: 1100C
*Nitrogen

Status

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Tool Owners

Location

Cleanroom - Pettit

Capabilities

General Equipment Specification - Tystar Furnace Systems
Thermal Processing - Film Growth

Shared Drive

No share drive for this equipment.

Schedule

Equipment access control, scheduling, and training is now managed within the Shared User Management System (SUMS)
To schedule time on equipment within SUMS browse to https://sums.gatech.edu/Department/IEN log in, search for equipment, and click & drag to schedule time.

Equipment with Similar Capabilities

Lindberg Furnace

The Lindberg furnaces are used for curing polymers, sintering, and growing oxides and nitrides on silicon wafers. Furnace 1- CMOS Sintering Tube Furnace 2- Polymer Curing Tube Furnace 3- Oxidation Tube Furnace 4- Polymer Curing Tube

Location

Cleanroom - Pettit

Lindberg Furnace 1 (CMOS Sintering Tube)

The Lindberg furnace tube 1 is used for curing polymers, sintering, and growing oxides and nitrides on silicon wafers.<br> <br> *Max temperature: 1100C<br> *Nitrogen<br> *Forming Gas (10% H2 in Nitrogen)<br>

Location

Cleanroom - Pettit

Lindberg Furnace 2 (Polymer Curing Tube)

The Lindberg furnace tube 2 is used for curing polymers, sintering, and growing oxides and nitrides on silicon wafers.<br> <br> *Max temperature: 1100C<br> *Nitrogen

Location

Cleanroom - Pettit

Lindberg Furnace 3 (Oxidation Tube)

The Lindberg furnace tube 3 is used for curing polymers, sintering, and wet/dry oxidation and nitrides on silicon wafers.<br> <br> *Max temperature: 1100C<br> *Oxygen

Location

Cleanroom - Pettit

Mini Tystar Tube 1

The Mini Tystar 1 is primarily used for wet oxidation at temperatures between 700-1100°C with a flash vaporizer. Batches of 4” silicon wafers (up to 25 wafers) can be processed at the same time, and the oxide uniformity is typically less than 1%.<br> <br> Common recipes:<br> WETOX.001<br> DRYOX.001<br> ANNEAL.001

Location

Cleanroom - Marcus Inorganic

Mini Tystar Tube 2

The Mini Tystar 2 is used for dry and wet oxidation at temperatures between 700-1100°C. Wet oxidation steam is created from the combustion of H2 and O2 (a pyrogenic process). Batches of 4” silicon wafers (up to 25 wafers) can be processed at the same time, and the oxide uniformity is typically less than 1%. <br> <br> Common recipes:<br> WETOX.002<br> DRYOX.002<br> ANNEAL.002

Location

Cleanroom - Marcus Inorganic

Mini Tystar Tube 4

Marcus Inorganic Mini Tystar - bottom tube (no tube at the moment)

Location

Cleanroom - Marcus Inorganic

Location

Cleanroom - Marcus Inorganic

MRL Furnace - Tube 2

MRL Furnace - Tube 2

Location

Cleanroom - Marcus Inorganic

MRL Furnace - Tube 3

MRL Furnace 3 is used for dry oxidation at temperatures between 700 -1150°C. Batches of up to 50 wafers (4 to 8”) can be processed with excellent uniformity (less than 1%).

Location

Cleanroom - Marcus Inorganic

MRL Furnace - Tube 4

MRL Furnace 4 is used for annealing only at temperature between 700-1150°C with batches of up to 50 wafers (4 to 8”).

Location

Cleanroom - Marcus Inorganic

Tystar Nitride Furnace

TYTAN Furnace systems can be used for all conventional atmospheric and low-pressure CVD processes employed in the semiconductor industry. A variety of advanced wafer fabrication processes are also possible, including: Thick Themal Oxides, Silicon-Germanium, etc. Tube 1- N-type doping, Polysilicon doping (N-type) Tube 2- P-type doping Tube 3- Padox, Well, Field (LOCOS) oxide growth Tube 4- LPCVD silicon nitride

Location

-

Tystar Nitride Furnace 1

The Tystar Nitride Furnace 1 is used for N-type doping, Polysilicon doping (N-type) with solid (PhosPlus) sources. N2 is available.<br> <br> Common recipes:<br> NDOPCOMM.001 at 1050C<br> NANNEAL.001

Location

Cleanroom - Pettit

Tystar Nitride Furnace 2

The Tystar Nitride Furnace 2 is used for P-type doping, polysilicon doping (P-type) with solid source (BoronPlus) sources. N2 is available.<br> <br> Common recipes: <br> PDOPCOMM.002 at 1050C<br> PANNEAL.002

Location

Cleanroom - Pettit

Tystar Nitride Furnace 3

The Tystar Nitride Furnace 3 is used for Padox, Well, Field (LOCOS) oxide, wet oxidation growth. Wet oxidation steam is created from the combustion of H2 and O2 (a pyrogenic process). Max 1100C. N2, O2, and H2 are available.

Location

Cleanroom - Pettit

Tystar Nitride Furnace 4

The Tystar Nitride Furnace 4 is used for LPCVD silicon nitride, including stoichiometric silicon nitride and low stress silicon nitride. N2, DCS, and NH3 are available. <br> <br> Common recipes:<br> NITRCOMM.004<br> LSNITRID.004 (Deposition rate: 3.46 nm/min, n=2.28 (Nov 3,2014))<br> <br> Max process temperature: 850C.

Location

Cleanroom - Pettit

Tystar Poly Furnace 1

The Tystar Poly Furnace 1 is used for LTO/implantation anneal. N2 and H2 gases are available (H2 will ONLY flow WITH N2 for combustion safety).

Location

Cleanroom - Pettit

Tystar Poly Furnace 2

The Tystar Poly Furnace 2 is used for Kooi, P-well drive, and dry, and wet oxidation. Wet oxidation steam is created from the combustion of H2 and O2 (a pyrogenic process). N2, O2, and H2 are available.

Location

Cleanroom - Pettit

Tystar Polysilicon Furnace

TYTAN Furnace systems can be used for all conventional atmospheric and low-pressure CVD processes employed in the semiconductor industry. A variety of advanced wafer fabrication processes are also possible, including: Thick Themal Oxides, Silicon-Germanium, etc. Polysilicon furnace: Deposition Tube 1- LTO/implantation anneal Tube 2- Kooi, P-well drive, and dry oxidation Tube 3- gate oxide growth Tube 4- polysilicon deposition

Location

-

Standard Recipes and Reports

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User Shared Files

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Billing Rates

You are billed the cleanroom hourly rate when logged into this tool, even if you are not logged into a cleanroom.

See our rates for more information.

Service Requests

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Equipment Log

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Training Sessions

Training for the IEN Cleanrooms is now managed within the Shared User Management System. (SUMS)
To get trained for the Cleanrooms, or equipment within the IEN department simply browse to http://sums.gatech.edu/Department/IEN
Log in with your Georgia Tech username and password, then browse to the IEN Equipment Group page to learn new training info.

Cleanroom

The IEN has cleanrooms in the Pettit Microelectronics Research building and the Marcus Nanotechnology Research building. Learn More

Georgia Tech Institute for Electronics and Nanotechnology

The Institute for Electronics and Nanotechnology (IEN) is a Georgia Tech interdisciplinary research institute designed to enhance support for rapidly growing research programs spanning biomedicine, materials, electronics and nanotechnology. Learn More

Visit Georgia Tech IEN

Marcus Nanotechnology Research Center
Georgia Institute of Technology
345 Ferst Drive NW
Atlanta, GA 30318
(404) 894-5100
Pettit Microelectronics Research Building
Georgia Institute of Technology
791 Atlantic Drive
Atlanta, Ga 30332
(404) 894-5100