Nanoimprint Lithography Now Available at Georgia Tech

Published: Sept. 22, 2005, midnight

A NIL system was installed at the MiRC in July which enables a low-cost process of mass replication of nanoscale and microscale structures.

An Obducat Nanoimprint Lithography (NIL) system was delivered and installed at the Georgia Tech Microelectronics Research Center (MiRC) in July of 2005. The system enables a low-cost process of mass replication (batch fabrication) of nanoscale and microscale structures. This tool, along with the MiRC's state-of-the-art electron beam nanolithography facility allows MiRC users the rare opportunity to have in one facilitythe ability to design and fabricate sub-20nm stamping templates and use them for nanoimprinting.

The system features a 6" chamber, UV exposure module, automatic demolding, and a heated stage. The maximum temperature and pressure that can be applied during the imprint process are 300°C and 80 bar, respectively. The imprint process works by applying a pneumatic force (and temperature when needed) on a template that is positioned above a substrate (typically Si wafer) with a thermoplastic or UV curable resist. Following the imprint process, the template is removed from the substrate leaving behind the deformed resist. Subsequent processes, such as a dry etch, are used to pattern the underlying material. Imprint technology has also been used to fabricate a wide range of devices such as polymer optical waveguides and fluidic channels. People with potential applications are invited to discuss them with MiRC staff. For more information, please contact Kevin Martin by phone at 404-894-4035 and email at, or Muhannad Bakir by phone at 404- 385-6276 and email at

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