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Thermal Film Growth

Poly-Silicon

Temp (°C) 580 - 650 (Lower T, Lower Stress)
Pressure (mT) 200 - 400
Gas (sccm) Sih2: 50 - 100
Refractive Index 4.0
Rate (Å/min) 50 - 100 (Lower T/P, Lower Dep. Rate)

Semi Insulating Polycrystalline Silicon

Temp (°C) 700-850
Pressure (mT) 200 - 400
Gas1 (sccm) N2O - 100
Gas2 (sccm) SiH4: 10-25
Refractive Index 1.45
Rate (Å/min) 50 - 100

Thermal Oxide

Low Temp

Temp (°C) 400-450
Pressure (mT) 200 - 400
Gas1 (sccm) SiH4 - 85
Gas2 (sccm) O2: 120
Refractive Index 1.45
Rate (Å/min) 100-120

High Temp

Temp (°C) 700-850
Pressure (mT) 200 - 400
Gas1 (sccm) N2O - 100
Gas2 (sccm) SiH4: 10-25
Refractive Index 1.45
Rate (Å/min) 50 - 100

Oxidation

Wet Oxidations

Tystar Furnace
Equipment Tystar Furnace
Temp (°C) 800-1150
Pressure (mT) atm
Gas1 (sccm) O2 - 3000
Rate (Å/min) --

Thermal Nitride

Standard Nitride

Equipment Tystar Furnace
Temp (°C) 780-800 (Higher T, Lower Stress)
Pressure (mT) 200-400
Gas1 (sccm) SiH2Cl2 - 33
Gas2 (sccm) NH3 - 100
Refractive Index 2.0
Deposition Rate (Å/min) --

Low Stress Nitride

Recipe Low Stress Nitride
Temp (°C) 780-800 (Higher T, Lower Stress)
Pressure (mT) 200-400
Gas1 (sccm) SiH2Cl2 - 100
Gas2 (sccm) NH3 - 25
Refractive Index 2.1
Deposition Rate (Å/min) 30-60
Recipe Low Stress
Temp (°C) 780-880 (Higher T, Lower Stress)
Pressure (mT) 200-400
Gas1 (sccm) SiH2Cl2 - 100
Gas2 (sccm) NH3 - 20
Refractive Index 2.2
Deposition Rate (Å/min) 30-60
Recipe Zero Stress or Compressive
Temp (°C) 780-800 (Higher T, Lower Stress)
Pressure (mT) 200-400
Gas1 (sccm) SiH2Cl2 - 100
Gas2 (sccm) NH3 - 16
Refractive Index 2.3
Deposition Rate (Å/min) 30-60